The study results for the THz detectors with a spatial serial and parallel connected transistor structure based on GaAs heterostructure with an asymmetric T-shaped gate in each transistor have been presented. It has been shown that the photovoltaic/photoconductive detectors demonstrate terahertz responses without using additional antenna elements. The sensitivity of up to 1000 V/W and 50 mA/W for the serial and parallel connection of transistors has been measured. An equivalent noise power below 10 W/Hz has been obtained.
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