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Radiation hardness assurance for microelectronics in general is mandatory for every wafer lot. Core manufacturing process should be controllable to ensure accuracy and stability of all stated parameters of the given product including its radiation hardness. Monitoring and statistical regulation method for core manufacturing process is developed based on data acquired from either radiation-oriented characterization of this process or preliminary tests during product development. On each fabrication step the corresponding test structures are used for predictive estimation of the product’s radiation hardness. In this work, based on both engineering and periodical data a set of test structures suitable for core manufacturing process control is proposed, using the example of the 250 nm CMOS SOI technology and fulfilling radiation hardness requirements. Statistical processing of the monitoring data for wafer lots is oriented to verify the degree of current lot deviation from basic lot chosen as standard for comparison. However, because lot size is small (3 pcs) it has been proposed to evaluate lot homogeneity with nonparametric statistical criteria. The considered approach makes it possible to guarantee required radiation hardness through core manufacturing process controllability and stability which allows for less economic value and tests volume minimization.

Key words: radiation hardness, core manufacturing process, statistical control, test structures, wafer lots, nonparametric statistical criteria
Published in: INTEGRATED ELECTRONICS ELEMENTS
Bibliography link: Moskovskaya Yu. M., Boychenko D. V. Prediction analysis of the microcircuits’ radiation hardness within fabrication process. II. Test objects choice and the obtained results statistical processing. Proc. Univ. Electronics, 2023, vol. 28, no. 3, pp. 337–350. https://doi.org/ 10.24151/1561-5405-2023-28-3-337-350. – EDN: UPFDOT.

Julia M. Moskovskaya
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute), Russia, 115409, Moscow, Kashirskoe ave., 31; “ENPO SPELS” JSC, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; SMC “Technological Centre”, Russia, 124498, Moscow, Zele

Dmitry V. Boychenko
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute), Russia, 115409, Moscow, Kashirskoe ave., 31; “ENPO SPELS” JSC, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

1. Московская Ю. М., Бойченко Д. В. Прогнозный контроль радиационной стойкости микросхем в серийном производстве. I. Система и алгоритмы реализации для различных категорий изделий // Изв. вузов. Электроника. 2023. Т. 28. № 2. С. 189–201. https://doi.org/10.24151/1561-5405-2023-28-2-189-201
Moskovskaya Yu. M., Boychenko D. V. Prediction analysis of the microcircuits’ radiation hardness within fabrication process. I. System and its implementation algorithms for various product categories. Proc. Univ. Electronics, 2023, vol. 28, no. 2, pp. 189–201. https://doi.org/10.24151/1561-5405-2023-28-2-189-201

2. Все о качестве. Отечественные разработки: науч.-техн. сб. / под ред. Г. Е. Герасимовой. Вып. 6: Статистическое управление технологическим процессом (методическое пособие). М.: НТК «Трек», 2001. 60 с.
All about quality. Domestic developments, ed. G. E. Gerasimova. Iss. 6. Statistical process control (guidance manual). Moscow, NTK “Trek” Publ., 2001. 60 p. (In Russian).

3. Московская Ю. М. Сравнительный анализ подходов к контролю радиационной стойкости ЭКБ в ходе ОКР и серийного производства // Наноиндустрия. 2021. Т. 14. № S7 (107). С. 293–296. https://doi.org/10.22184/1993-8578.2021.14.7s.293.296
Moskovskaya Yu. M. Comparative analysis of approaches to control the radiation resistance of the ECB during the OCP and serial production. Nanoindustriya = Nanoindustry, 2021, vol. 14, no. S7 (107), pp. 293–296. (In Russian).https://doi.org/10.22184/1993-8578.2021.14.7s.293.296

4. Optimizing and controlling the radiation hardness of a Si-gate CMOS process / P. S. Winokur, E. B. Errett, D. M. Fleetwood et al. // IEEE Transactions of Nuclear Science. 1985. Vol. 32. No. 6. P. 3954–3960. https://doi.org/10.1109/TNS.1985.4334049

5. Сивченко А. С. Разработка методики анализа дефектности подзатворного диэлектрика на тестовых структурах в составе пластин // Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС). 2014. № 2. С. 145–150.
Sivchenko A. S. Development of methods for the analysis of defects in the gate dielectric on the test structures in the wafers. Problemy razrabotki perspektivnykh mikro- i nanoelektronnykh sistem (MES) = Problems of Advanced Micro- and Nanoelectronic Systems Development (MES), 2014, no. 2, pp. 145–150. (In Russian).

6. Московская Ю. М., Никифоров А. Ю., Сницар В. Г. Рациональный методический подход к контролю радиационной стойкости партий пластин в процессе производства // Наноиндустрия. 2020. Т. 13. № S4 (99). С. 188–190. https://doi.org/10.22184/1993-8578.2020.13.4s.188.190
Moskovskaya Yu. M., Nikiforov A. Yu., Snitsar V. G. Rational methodological approach to control of plates batches radiation resistance during production. Nanoindustriya = Nanoindustry, 2020, vol. 13, no. S4 (99), pp. 188–190. (In Russian). https://doi.org/10.22184/1993-8578.2020.13.4s.188.190

7. Горбунов М. С. Моделирование и проектирование элементов КМОП интегральных микросхем технологии «кремний-на-изоляторе» с повышенной стойкостью к дозовым эффектам: автореф. дис. … канд. техн. наук. М., 2010. 25 с.
Gorbunov M. S. Modeling and design of “silicon-on-insulator” technology CMOS integrated circuit elements with increased resistance to dosage effects, extended abstract of diss. for the Cand. Sci. (Eng.). Moscow, 2010. 25 p. (In Russian).

8. Lehmann E. L., D’Abrera H. J. Nonparametrics: Statistical methods based on ranks. San Francisco: Holden-Day, 1975. 457 p. (Holden-Day series in probability and statistics).

9. Состав и принцип формирования типовой оценочной схемы для оценки радиационной стойкости базовых матричных кристаллов и полузаказных БИС на их основе / Ю. М. Московская, Р. А. Федоров, А. Н. Денисов и др. // Наноиндустрия. 2017. № 1 (71). С. 60–69. https://doi.org/10.22184/1993-8578.2017.71.1.60.69
Moskovskaya Yu., Fedorov R., Denisov A., Bobrovskiy D., Ulanova A., Nikiforov A. Composition and principle of formation of standard evaluation circuit as simulator of gate arrays and semicustom very large scale IC based on them for radiation tests. Nanoindustriya = Nanoindustry, 2017, no. 1 (71), pp. 60–69. (In Russian). https://doi.org/10.22184/1993-8578.2017.71.1.60.69

10. Елесин В. В., Никифоров А. Ю., Телец В. А., Чуков Г. В. Комплекс методических, аппаратных и программных средств для автоматизированных исследований параметров полупроводниковых СВЧ ИС в условиях испытаний на радиационную стойкость // Спецтехника и связь. 2011. № 4-5. С. 28–32.
Elesin V. V., Nikiforov A. Yu., Telets V. A., Chukov G. V. A set of methodological, hardware and software tools for automated research of the parameters of semiconductor microwave ICs under conditions of radiation resistance tests. Spetstekhnika i svyaz’, 2011, no. 4-5, pp. 28–32. (In Russian).

11. Process parameters variations influence on CMOS IC’s hardness to total ionizing dose / Y. M. Moskovskaya, A. Y. Nikiforov, D. V. Bobrovskiy et al. // 2017 IEEE 30th International Conference on Microelectronics (MIEL). Niš: IEEE, 2017. P. 275–277. https://doi.org/10.1109/MIEL.2017.8190120

12. Большев Л. Н., Смирнов Н. В. Таблицы математической статистики. М.: Наука, 1983. 416 с.
Bol’shev L. N., Smirnov N. V. Tables of mathematical statistics. Moscow, Nauka Publ., 1983. 416 p. (In Russian).

13. Nonparametric statistical analysis of radiation hardness threshold variation in CMOS IC wafer lots series with the aim of process monitoring / Yu. I. Bogdanov, N. A. Bogdanova, D. V. Fastovets et al. // 2019 IEEE 31st International Conference on Microelectronics (MIEL). Niš: IEEE, 2019. P. 193–196. https://doi.org/ 10.1109/MIEL.2019.8889642

14. Статистический контроль радиационной стойкости в ходе серийного производства микросхем на основе непараметрических критериев оценивания / Ю. М. Московская, Ю. И. Богданов, А. В. Согоян и др. // Международный форум «Микроэлектроника-2019», 5-я Международная научная конференция «Электронная компонентная база и микроэлектронные модули» (Республика Крым, г. Алушта, 30 сент. – 05 окт. 2019): сб. тезисов. М.: Техносфера, 2019. С. 163–167.
Moskovskaya Yu. M., Bogdanov Yu. I., Sogojan A. V., Nikiforov A. Yu., Bogdanova N. A., Fastovets D. V. Statistical monitoring of radiation stability during serial production of chips based on nonparametric evaluation criteria. Mezhdunarodnyy forum “Mikroelektronika-2019”, 5-ya Mezhdunarodnaya nauchnaya konferentsiya “Elektronnaya komponentnaya baza i mikroelektronnyye moduli” (Respublika Krym, g. Alushta, 30 sent. – 05 okt. 2019), collection of abstracts. Moscow, Tekhnosfera Publ., 2019, pp. 163–167. (In Russian).

15. Крамер Г. Математические методы статистики / пер. с. англ А. С. Монина, А. А. Петрова; под ред. А. Н. Колмогорова. 2-е изд., стер. М.: Мир, 1975. 648 с.
Cramér H. Mathematical methods of statistics. 13th print. Princeton, NJ, Princeton Univ. Press, 1974. 575 p. Princeton landmarks in mathematics.

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UDK: 621.3.049.77:544.541
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-3-337-350
RISC id: UPFDOT

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