<?xml version="1.0" encoding="UTF-8"?>
<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en">
  <front>
    <journal-meta>
      <journal-id journal-id-type="issn">1561-5405</journal-id>
	    <journal-id journal-id-type="doi">10.24151/1561-5405</journal-id>	  
      <journal-id journal-id-type="publisher-id">Proceedings of Universities. Electronics</journal-id>
      <journal-title-group>
        <journal-title xml:lang="en">Scientifical and technical journal "Proceedings of Universities. Electronics"</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технический журнал «Известия высших учебных заведений. Электроника»</trans-title>
        </trans-title-group>        
      </journal-title-group>      
      <issn publication-format="print">1561-5405</issn>
      <issn publication-format="online">2587-9960</issn>
      <publisher>
        <publisher-name xml:lang="en">National Research University of Electronic Technology</publisher-name>
        <publisher-name xml:lang="ru">Национальный исследовательский университет "Московский институт электронной техники"</publisher-name>
      </publisher>
    </journal-meta>
    <article-meta>                                    
      
    <article-id pub-id-type="doi">10.24151/1561-5405-2023-28-3-271-280</article-id><article-id pub-id-type="risc">YUDZPB</article-id><article-id pub-id-type="udk">539.23:535.343.9</article-id><article-categories><subj-group><subject>Mатериалы электроники</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Nanotubes based on 2D Janus-type materials SMoSiN2  for applications  in nanoelectronics</article-title><trans-title-group xml:lang="ru"><trans-title>Нанотрубки на основе 2D-материалов SMoSiN2 типа Янус   для применений в наноэлектронике</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><string-name xml:lang="ru">Морозова Екатерина Владимировна</string-name><name-alternatives><name xml:lang="ru"><surname>Морозова</surname><given-names>Екатерина Владимировна</given-names></name><name xml:lang="en"><surname>Morozova</surname><given-names>Ekaterina V.</given-names></name></name-alternatives><string-name xml:lang="en">Ekaterina V. Morozova</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><contrib contrib-type="author"><string-name xml:lang="ru">Тимкаева Диана Абдулхаковна</string-name><name-alternatives><name xml:lang="ru"><surname>Тимкаева</surname><given-names>Диана Абдулхаковна</given-names></name><name xml:lang="en"><surname>Timkaeva</surname><given-names>Diana A.</given-names></name></name-alternatives><string-name xml:lang="en">Diana A. Timkaeva</string-name><xref ref-type="aff" rid="AFF-2"/></contrib><aff id="AFF-1" xml:lang="ru">Ulyanovsk State University, Ulyanovsk, Russia; SMС “Technological Centre”, Moscow, Russia </aff><aff id="AFF-2" xml:lang="ru">Ulyanovsk State University, Ulyanovsk, Russia; SMС “Technological Centre”, Moscow, Russia</aff></contrib-group><pub-date iso-8601-date="2026-04-13" date-type="pub" publication-format="electronic"><day>13</day><month>04</month><year>2026</year></pub-date><volume>Том. 28 №3</volume><fpage>271</fpage><lpage>280</lpage><self-uri>http://ivuz-e.ru/en/issues/3-_2023/nanotrubki_na_osnove_2d_materialov_smosin2_tipa_yanus_dlya_primeneniy_v_nanoelektronike/</self-uri><self-uri content-type="pdf">http://ivuz-e.ru/en/download/3_2023_4201_en.pdf</self-uri><abstract xml:lang="en"><p>Two-dimensional (2D) Janus-type materials XMoSiN2 (X = S, Se or Te) are characterized by high values of binding energy and strong built-it field allowing the separation of generated electron-hole pairs within a single layer. These 2D materials are promising for photovoltaic applications. In this work, nanotubes of small diameters based on 2D Janus-type materials SMoSiN2, constructed and optimized, are considered in the framework of modeling. Using density functional theory calculations, the band structures and optical absorption spectra of these nanotubes with different chalcogen arrangements have been obtained. For the considered structures, a wide region of absorption of short-wavelength radiation is observed under tube deformation ε = 12.46 %.  XMoSiN2 Janus-type nanotubes act as semiconductors, the electronic and optical properties of which can be controlled by tube deformation.</p></abstract><trans-abstract xml:lang="ru"><p>2D-материалы XMoSiN2 типа Янус &amp;#40;X = S, Se или Te&amp;#41; характеризуются высокими значениями энергии связи и сильным встроенным электрическим полем, позволяющим разделять генерируемые электронно-дырочные пары в пределах одного слоя. Данные 2D-материалы перспективны для фотовольтаических приложений. В настоящей работе в рамках моделирования рассмотрены выращенные и оптимизированные нанотрубки малых диаметров на основе 2D-материалов SMoSiN2 типа Янус. С помощью расчетов в рамках теории функционала плотности получены зонные структуры и спектры оптического поглощения таких нанотрубок с различным расположением халькогена. Для рассмотренных структур наблюдается широкая область поглощения коротковолнового излучения при деформации трубки ε = 12,46 &amp;#37;. Нанотрубки XMoSiN2 типа Янус проявляют себя как полупроводники, электронными и оптическими свойствами которых можно управлять путем их деформации.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>2D material SMoSiN2</kwd><kwd>nanotube</kwd><kwd>zone structure</kwd><kwd>optical absorption spectra</kwd></kwd-group><kwd-group xml:lang="en"><kwd>2D material SMoSiN2</kwd><kwd>nanotube</kwd><kwd>zone structure</kwd><kwd>optical absorption spectra</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">работа выполнена при финансовой поддержке  Минобрнауки России (проект FNRM-2022-0008).</funding-statement><funding-statement xml:lang="ru">Morozova E. V., Timkaeva D. A. Nanotubes based on 2D Janus-type materials SMoSiN2 for applications in nanoelectronics. Proc. Univ. Electronics, 2023,  vol. 28, no. 3, pp. 271–280. https://doi.org/ 10.24151/1561-5405-2023-28-3-271-280. –  EDN: YUDZPB.</funding-statement></funding-group></article-meta>
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