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Currently, the increasingly higher requirements are imposed upon functional nodes of ICs. One of these requirements is interconnection metallization. The use of ordinary metals cannot fully enable devices operation at temperatures 200 °C and above. Therefore refractory metals, for example tungsten, are advantageous. Tungsten is characterized by increased electromigration resistance; however, it is a brittle, rigid material with a low adhesive ability to silicon and silicon oxide. This reduces the efficiency of its use for IC interconnection metallization. In this work, it was shown based on the analysis of the literature that the addition of rhenium to tungsten provides the production of yielding conductive interconnections characterized by satisfactory adhesion ability. It has been established that titanium and nitrogen have an effect similar to rhenium. These materials also reduce mechanical stresses in tungsten films and increase their adhesive ability. Results of literature sources analysis allow for the conclusion that the interconnections based on tungsten with various dopants such as rhenium, titanium and nitrogen can be used as functional material in high-temperature electronics.

Key words: metallization, tungsten, tungsten alloys, rhenium effect, electromigration, mechanical properties, adhesion
Published in: Technological processes and routes
Bibliography link: Timakov A. V., Gornostay-Polsky V. S., Shevyakov V. I. Multilevel metallization of high-temperature silicon IС based on tungsten. Physics and technology. Review. Proc. Univ. Electronics, 2023, vol. 28, no. 2, pp. 164–179. https://doi.org/ 10.24151/1561-5405-2023-28-2-164-179
Financial source: the work has been supported by the Russian Science Foundation (project No. 22-29-01095).

Aleksey V. Timakov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Vadim S. Gornostay-Polsky
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Vasily I. Shevyakov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: 621.382.049.77:658.274
Publication type: Review article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-2-164-179

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