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Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika

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The capacitance-voltage (C-V) and volt-siemens (G-V) characteristics in space charge regions (SCR) in thin semiconductor layers are measured for process monitoring and study in semiconductor devices manufacturing. Direct determination of concentration profiles and carrier mobility by measured C-V and G-V characteristics is a critical task. In this work, simple operational methods for processing C-V and G-V characteristics in SCR in thin semiconductor layers, aiming at obtaining concentration and mobility distribution profiles of charge carriers, are proposed. In particular, the determination of the concentration profile of the majority carriers of the semiconductor, the determination of the mobility profile of the main semiconductor carriers on structures with a conductive substrate, and the determination of the mobility profile of the main semiconductor carriers on structures with an insulating substrate, are considered. It has been demonstrated that the methods for processing C-V and G-V characteristics of semiconductor structures such as a Schottky diode, asymmetric p–n junction and MIS structures can be used for technological processes monitoring and when sorting finished devices.
Vladimir P. Karamyshev
National Research University of Electronic Techology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
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