One of the important Spice simulation issues is the lack of verified Spice models of ICs under conditions of destabilizing influences: temperature, radiation, mechanical, and others. The models are refined either by the contracting firm commissioned by the crystal manufacturer, or by the electronic equipment developer himself. In this work, a technique for the operational parametric identification of CMOS ICs Spice models is proposed, and the models’ identification parameters, their selection criteria and identification parameters variation range selection criteria are considered. An example of the proposed technique application for the 1564LE1 microcircuit model parameters identification is given. Approbation of the proposed technique was carried out individually for three samples of 1564LE1 microcircuits from different production batches on experimental data obtained using a ring generator in the temperature range. Formulas for IC model correction factors have been proposed, allowing its parameters refinement without the use of iterative algorithms. Studies have shown that the use of the proposed identification technique makes it possible to improve the simulation accuracy.