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The uniqueness of the properties of silicon-carbon and silicon-metalcarbon films, representatives of the nanocrystalline and amorphous classes of carbon allotropes, has led to a wide range of areas of their possible application. In this work, the analysis of the dynamics of development of technologies for obtaining and expanding the areas of application of silicon-carbon and silicon-metal-carbon films has been conducted. Thus, the elasticity, mechanical strength (1500–3000 kg/mm2) and chemical resistance of the films ensured the effectiveness of their application as passivating coatings. Thermal conductivity and high emissivity (0.8), high modulus of elasticity (9∙1011 N/m2), high resistivity of silicon-carbon films (105–108 Ohm∙cm) and their transparency for electromagnetic radiation (up to frequencies of several tens of gigahertz) allow their application for broadband RF devices as moving elements (beams, bridges, membranes) of MEMS switches and varactors. Thermal resistance (up to 600 °C, in an open system), sufficiently high electrical conductivity (resistivity ~ 10–5 Ohm∙cm) and high emissivity of the films make it possible to form broadband heating-type radiators based on silicon-metal-carbon films, with an emission spectrum (depending on film temperature) in the range of 2–14 μm. Phase transformations of an amorphous silicon-carbon film into a graphene film, carried out by high-temperature annealing in vacuum over a catalyst, allows the formation on its basis of control electrodes with low “grid” current losses (no more than 5 %) in vacuum emission devices of power microwave electronics, as well as the functional layer of a multilayer heterostructure of a field emission medium for cold mobile cathode-grid units. The revealed effect of self-modulation of the phase and elemental composition of a silicon-metalcarbon film in the direction of growth is of not only applied but also fundamental interest.

Key words: allotropic carbon compounds, silicon-carbon films, silicon-metal-carbon films, graphene films, polyorganic precursor, polyphenylmethylsiloxane, self-modulation of the phase composition of metal-silicon-carbon films, Raman spectra
Published in: ELECTRONICS MATERIALS
Bibliography link: Dmitriev V.K., Il’ichev E.A., Kirpilenko G.G., Petrukhin G.N., Rychkov G.S., Frolov V.D. Characteristics and areas of possible application of amorphous silicon–carbon and metal–silicon–carbon films. Review. Semiconductors, 2023, vol. 57, no. 1, pp. 11-27. https://doi.org/10.1134/S1063782623010025
Financial source: the work has been supported by State Assignment no. FSMR-2023-0003.

Vitaley K. Dmitriev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Eduard A. Il’ichev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Grigoriy G. Kirpilenko
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Georgiy N. Petrukhin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Gennady S. Rychkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Vadim D. Frolov
A.M. Prokhorov Institute of General Physics of the Russian Academy of Sciences (Russia, 119991, GSP-1, Moscow, Vavilov st., 38)

1. Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz / K. Ueda, M. Kasu, Y. Yamauchi et al. // IEEE Electron Device Letters. 2006. Vol. 27. Iss. 7. P. 570–572. https://doi.org/10.1109/LED.2006.876325
2. Bunch characteristics of an electron beam generated by a diamond secondary emitter am-plifier / K. L. Jensen, J. E. Yater, J. L. Shaw et al. // Journal of Applied Physics. 2010. Vol. 108. Iss. 4. Art. ID: 044509. https://doi.org/10.1063/1.3462437
3. Il’ichev E. A., Kuleshov A. E., Poltoratskii E. A., Rychkov G. S. Electron multiplier con-centrator on the base of polycrystalline diamond film // Diamond & Related Materials. 2011. Vol. 20. Iss. 1. P. 23–25. https://doi.org/10.1016/j.diamond.2010.11.002
4. Image converter tubes with diamond photocathodes and electron flow multipliers / V. A. Bespalov, E. A. Il’ichev, I. P. Kazakov et al. // Diamond & Related Materials. 2021. Vol. 120. Art. No. 108603. https://doi.org/10.1016/j.diamond.2021.108603
5. Characteristics of solar-blind electron-optical converters with diamond photocathodes / V. A. Bespalov, E. A. Il’ichev, G. A. Kirpilenko et al. // Tech. Phys. Lett. 2021. Vol. 47. Iss. 6. P. 432–435. https://doi.org/10.1134/S1063785021050047
6. Design and investigation of UV image detectors / V. A. Bespalov, V. M. Glazov, E. A. Il’ichev et al. // Tech. Phys. 2015. Vol. 60. Iss. 4. P. 553–560. https://doi.org/10.1134/S1063784215040076
7. 100-GHz transistors from wafer-scale epitaxial graphene / Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins et al. // Science. 2010. Vol. 327. Iss. 5966. P. 662. https://doi.org/10.1126/science.1184289
8. Lateral emitter as a base element of integrated emission electronics / S. A. Gavrilov, É. A. Il’ichev, A. I. Kozlitin et al. // Tech. Phys. Lett. 2004. Vol. 30. Iss. 6. P. 466–468. https://doi.org/10.1134/1.1773337
9. Effects of UV laser micropatterning on frictional performance of diamond-like nanocom-posite films / E. V. Zavedeev, O. S. Zilova, A. D. Barinov et al. // Appl. Phys. A. 2016. Vol. 122. Iss. 11. Art. No. 961. https://doi.org/10.1007/s00339-016-0508-7
10. Studying the transparency of graphene for low-energy electrons / E. A. Il’ichev, A. E. Kuleshov, D. M. Migunov et al. // Tech. Phys. Lett. 2018. Vol. 44. P. 848–851. https://doi.org/10.1134/S1063785018090201
11. Dorfman V. F. Preface // Diamond and diamond-like carbon coatings 1990: proc. of the 1st European conf. (Crans-Montana, Switzerland, Sept. 17–19, 1990). Amsterdam: Elsevier Science, 1991. P. 806.
12. Dorfman V. F. Diamond-like nanocomposites (DLN) // Thin Solid Films. 1992. Vol. 212. P. 267–273. https://doi.org/10.1016/0040-6090(92)90532-G
13. Diamond-like nanocomposites: electronic transport mechanisms and some applications / V. F. Dorfman, A. Bozko, B. N. Pypkin et al. // Thin Solid Films. 1992. Vol. 212. P. 274–281. https://doi.org/10.1016/0040-6090(92)90533-H
14. Control of properties of diamond-like silicon–carbon films / A. I. Popov, A. D. Barinov, V. M. Emets et al. // Phys. Solid State. 2020. Vol. 62. Iss. 10. P. 1780–1786. https://doi.org/10.1134/S1063783420100261
15. Nanoamorphe Kohlenstoffschichten für Infrarotstrahler / G. Kirpilenko, V. Dmitriev, T. Skotheim et al. // Photonik. 2008. Vol. 6. S. 35–37.
16. Thermostable resistors based on diamond-like carbon films deposited by CVD method / V. K. Dmitriev, V. N. Inkin, G. G. Kirpilenko et al. // Diamond & Related Materials. 2001. Vol. 10. P. 1007–1010. https://doi.org/10.1016/S0925-9635(00)00612-9
17. Исследование молекулярной структуры матрицы алмазоподобных кремний-углеродных нанокомпозитов / А. И. Белогорохов, А. М. Додонов, М. Д. Малинкович и др. // Изв. вузов. Материалы электронной техники. 2007. № 1. С. 69–71.
Belogorokhov A. I., Dodonov A. M., Malinkovich M. D., Parkhomenko Y. N., Smirnov A. P., Shupegin M. L. Studying of molecular structure of matrix of diamond-like silicon-carbon nanocomposites. Izv. vuzov. Materialy elektronnoi tekhniki = Materials of Electronics Engineering, 2007, no. 1, pp. 69–71. (In Russian).
18. Микроэлектромеханические переключатели на основе аморфных алмазоподобных углеродных пленок / В. А. Власенко, С. Н. Беляев, А. Г. Ефимов и др. // Письма в ЖТФ. 2009. Т. 35. № 15. С. 105–110.
Vlasenko V. A., Belyaev S. N., Efimov A. G., Il’ichev E. A., Malenkovich M. D., Nemirovskii V. E., Poltoratskii E. A., Goryachev A. V. et al. Microelectromechanical switches based on amorphous diamond-like carbon films. Pis’ma v ZhTF = JTP Letters, 2009, vol. 35, no. 15, pp. 105–110. (In Russian).
19. Микроэлектромеханические коммутаторы для радиочастотных устройств / В. А. Власенко, А. Г. Ефимов, Э. А. Ильичев и др. // Нано- и микросистемная техника. 2009. № 10 (111). С. 30–34.
Vlasenko V. A., Efimov A. G., Il’ichev E. A., Nemirovskii V. E., Poltoratskii E. A., Gorjachev A. V., Popkov A. F., Frolova G. V., Shupegin M. L. MEMS commutators for -F devices. Nano- i mikrosistemnaya tekhnika = Nano- and microsystem technology, 2009, no. 10 (111), pp. 30–34. (In Russian).
20. Власенко В. А., Ефимов А. Г., Ильичев Э. А., Полторацкий Э. А. Перспективы использования элементов микроэлектромеханических систем в СВЧ-модулях // Вопросы радиоэлектроники. 2009. Т. 3. № 1. С. 137–143.
Vlasenko V. A., Efimov A. G., Ilyichev E. A., Poltoratsky E. A. Prospects for the use of microelectromechanical systems in microwave modules. Voprosy radioelektroniki = Questions of Radio Electronics, 2009, vol. 3, no. 1, pp. 137–143. (In Russian).
21. Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films / E. A. Il’ichev, E. P. Kirilenko, G. N. Petrukhin et al. // Tech. Phys. Lett. 2014. Vol. 40. Iss. 1. P. 52–54. https://doi.org/10.1134/S1063785014010234
22. Способ формирования графеновых пленок / Э. А. Ильичев, Е. П. Кириленко, Г. Н. Петрухин и др. // ЖТФ. 2014. Т. 84. № 7. С. 62–66.
Il’ichev E. A., Kirilenko E. P., Petrukhin G. N., Rychkov G. S., Sakharov O. A., Khamdokhov Z. M., Khamdokhov E. Z., Chernyavskaya E. S., Shupegin M. L., Shchekin A. A. Method for the formation of
graphene films. Tech. Phys., 2014, vol. 59, iss. 7, pp. 1007–1011. https://doi.org/10.1134/1063784214070135
23. Free-standing epitaxial graphene / Sh. Shivaraman, R. A. Barton, X. Yu et al. // Nano Lett. 2009. Vol. 9. Iss. 9. P. 3100–3105. https://doi.org/10.1021/nl900479g
24. Development and investigation of a field emission medium for autocathodes of mobile power microwave devices / V. A. Bespalov, E. A. Il’ichev, S. V. Kuklev et al. // Techn. Phys. 2018. Vol. 63. Iss. 3. P. 443–451. https://doi.org/10.1134/S1063784218030027
25. Пат. 2629013 РФ. Автоэмиссионный сверхвысокочастотный диод и способ его из-готовления / В. А. Беспалов, Э. А. Ильичев, Г. С. Рычков и др.; заявл. 06.07.2015; опубл. 24.08.2017, Бюл. № 24. 9 с.
Bespalov V. A., Ilichev E. A., Rychkov G. S., Petrukhin G. N., Kuklev S. V., Kuleshov A. E., Sokolov D. S., Sokolova N. V., Yakushov S. S. Auto-emission super-frequency diode and method of its manufacture. Patent 2629013 RF, publ. 24.08.2017, Bul. no. 24. 9 p. (In Russian).
26. Evolution of properties in composite carbon films under thermal conditions and in the presence of a catalyst / S. N. Belyaev, G. G. Kirpilenko, E. P. Kirilenko et al. // J. Surf. Investig. 2016. Vol. 10. Iss. 4. P. 753–757. https://doi.org/10.1134/S1027451016040042
27. Synthesis, characterization and nanostructuring of (a-C:H):Si and (a-C:H):Si:metal films / G. G. Kirpilenko, V. D. Frolov, E. V. Zavedeev et al. // Diamond & Related Materials. 2006. Vol. 15. Iss. 4–8. P. 1147–1150. https://doi.org/10.1016/j.diamond.2005.10.026
28. New type of regular carbon nanostructures: Nanocones on the surfaces of carbon-silicon (a-C:H) composite films / V. D. Frolov, S. M. Pimenov, E. V. Zavedeev et al. // J. Surf. Investig. 2007. Vol. 1. Iss. 3. P. 303–305. https://doi.org/10.1134/S1027451007030135
29. Nanocones on (a-C:H):Si composite films: Thermal stability, growth dynamics and elec-trical properties / V. D. Frolov, E. V. Zavedeev, S. M. Pimenov et al. // Diamond & Related Ma-terials. 2007. Vol. 16. Iss. 4–7. P. 1218–1221. https://doi.org/10.1016/j.diamond.2006.11.013
30. Optical properties of nanostructured a-C:H:Si films / V. D. Frolov, V. A. Gerasimenko, V. V. Kononenko et al. // Nanotechnol. Russia. 2009. Vol. 4. Iss. 5-6. P. 366–372. https://doi.org/10.1134/S1995078009050152
31. Relation between mechanical and structural properties of silicon-incorporated hard a-C:H films / A. L. Baia Neto, R. A. Santos, F. L. Freire Jr. et al. // Thin Solid Films. 1997. Vol. 293. Iss. 1-2. P. 206–211. https://doi.org/10.1016/S0040-6090(96)08948-1
32. Characterization of silicon-stabilized amorphous hydrogenated carbon / W. C. Vassell, A. K. Gangopadhyay, T. J. Potter et al. // J. Mater. Eng. Perform. 1997. Vol. 6. Iss. 4. P. 426–432. https://doi.org/10.1007/s11665-997-0112-2
33. UV studies of tetrahedral bonding in diamond-like amorphous carbon / V. I. Merkulov, J. S. Lannin, C. H. Munro et al. // Phys. Rev. Lett. 1997. Vol. 78. Iss. 25. P. 4869–4872. https://doi.org/10.1103/PhysRevLett.78.4869
34. Diamond semiconductor technology for RF device applications / Y. Gurbur, O. Esame, I. Tekin et al. // Solid-State Electronics. 2005. Vol. 49. Iss. 7. P. 1055–1070. https://doi.org/10.1016/j.sse.2005.04.005
35. Влияние переходных металлов на диэлектрические свойства алмазоподобных кремний-углеродных пленок / А. И. Попов, А. Д. Баринов, В. М. Емец и др. // Физика твердого тела. 2021. Т. 63. № 11. С. 1844–1851. https://doi.org/10.21883/FTT.2021.11.51586.132
Popov A. I., Barinov A. D., Yemets V. M., Castro R. A., Kolobov A. V., Kononov A. A., Ovcharov A. V., Chukanova T. S. Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films. Fizika tverdogo tela = Physics of the Solid State, 2021, vol. 63, no. 11, pp. 1844–1851. (In Russian). https://doi.org/10.21883/FTT.2021.11.51586.132

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UDK: 621.382.2/3:661.66:539.23:544.47
Publication type: Review article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-1-24-48
RISC id: WWLBUT

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