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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en">
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    <journal-meta>
      <journal-id journal-id-type="issn">1561-5405</journal-id>
	    <journal-id journal-id-type="doi">10.24151/1561-5405</journal-id>	  
      <journal-id journal-id-type="publisher-id">Proceedings of Universities. Electronics</journal-id>
      <journal-title-group>
        <journal-title xml:lang="en">Scientifical and technical journal "Proceedings of Universities. Electronics"</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технический журнал «Известия высших учебных заведений. Электроника»</trans-title>
        </trans-title-group>        
      </journal-title-group>      
      <issn publication-format="print">1561-5405</issn>
      <issn publication-format="online">2587-9960</issn>
      <publisher>
        <publisher-name xml:lang="en">National Research University of Electronic Technology</publisher-name>
        <publisher-name xml:lang="ru">Национальный исследовательский университет "Московский институт электронной техники"</publisher-name>
      </publisher>
    </journal-meta>
    <article-meta>                                    
      
    <article-id pub-id-type="udk">538.911; 539.231</article-id><article-categories><subj-group><subject>Материалы электронной техники</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Investigation of Few-Layer Graphene Structures Based on Quantum-Chemical Model</article-title><trans-title-group xml:lang="ru"><trans-title>Исследование мультиграфеновых структур на основе квантово-химической модели</trans-title></trans-title-group></title-group><fpage>5</fpage><lpage>9</lpage><self-uri>http://ivuz-e.ru/en/issues/1-_2015/issledovanie_multigrafenovykh_struktur_na_osnove_kvantovo_khimicheskoy_modeli/</self-uri><self-uri content-type="pdf">http://ivuz-e.ru/en/download/1_2015_1988_en.pdf</self-uri><abstract xml:lang="en"><p>The electronic structure of the few-layer graphene has been studied using the density functional theory (DFT). The dependency of the average interlayer distance on the number of layers (n = 2 ÷ 6) has been determined. The analysis of the charge redistribution and the electron density of the bi- and three-layer graphene under the uniaxial compression up to 50 GPa has been performed.</p></abstract><trans-abstract xml:lang="ru"><p>Методом теории функционала плотности исследована электронная структура мультиграфена. Определена зависимость усредненного меж-плоскостного расстояния от числа слоев &amp;#40; n = 2,...,6&amp;#41;. Проведен анализ перераспределения заряда и электронной плотности двух- и трехслойного мультиграфенов под действием одноосного сжатия при давлении до 50 ГПа.</p></trans-abstract><kwd-group xml:lang="ru"><kwd/></kwd-group><funding-group/></article-meta>
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