Enhancing the photosensitivity of titanium dioxide TiO2 by shifting the absorption spectrum to the long-wave region of the solar spectrum is a critical task. Solution to this problem is possible through the modification of TiO2, e. g. by formation of heterostructures with another semiconductor material. In this work, the development of a technique for the formation of photoactive TiO2-ZnO composite layers using electrophoretic deposition is presented. The results of studying the photosensitivity of TiO2 and TiO2-ZnO samples on a silicon substrate coated with carbon nanotubes are given. The formation of TiO2-ZnO composite layers by electrophoretic deposition was carried out using stabilizing additives: sodium lauryl sulfate and hydroxypropylcellulose. As a result the layers of TiO2-ZnO/carbon nanotubes composite material were obtained; their morphology was studied by SEM. It was demonstrated that the addition of 50 wt. % zinc oxide ZnO to the suspension provides the formation of TiO2-ZnO composite material with ZnO content of 30 wt. %. The study of obtained layer’s photosensitivity by chronoamperometry has shown an increase in the generated photocurrent by 5 times when using the full spectrum of a xenon lamp in comparison with a similar structure based on commercial TiO2 P25.
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Key words:
titanium dioxide TiO2, zinc oxide ZnO, electrophoretic deposition, photosensitive materials
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Published in:
Technological processes and routes
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Bibliography link:
Pak K. I., Sorokina L. I., Kuzmin A. V., Ryazanov R. M., Kitsyuk E. P., Dubkov S. V., Gromov D. G. Formation of composite TiO2-ZnO layers with increased photosensitivity by electrophoretic deposition. Proc. Univ. Electronics, 2024, vol. 29, no. 3, pp. 290–299. https://doi.org/10.24151/1561-5405-2024-29-3-290-299
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Financial source:
The work has been supported by the Russian Science Foundation (project no. 22-19-00654).
Kira I. Pak
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Larisa I. Sorokina
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Artyom V. Kuzmin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Roman M. Ryazanov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Evgeny P. Kitsyuk
SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Sergey V. Dubkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)
Dmitry G. Gromov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); I. M. Sechenov First Moscow State Medical University (Russia, 119435, Moscow Bolshaya Pirogovskaya st., 2, bld. 4)
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