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Porous silicon with high porosity and layer thickness is in demand as a sensor material due to its high reacting capacity. Its parameters over a wide range can be controlled with Pt-assisted chemical etching. The conductivity and resistivity type of the initial single-crystal silicon wafer significantly affect the resulting porous silicon parameters and properties, as they determine both the amount and distribution density of the deposited platinum over the surface, along with the silicon etching rate. The effect of the single-crystal silicon wafer conductivity type and resistivity on the morphology of the porous layer formed by Pt-assisted chemical etching was studied in this work. Platinum particles were applied on silicon wafers through chemical deposition from an aqueous solution containing HF and H2PtCl6. The porous silicon layer formation dynamics were studied with scanning electron microscopy (SEM) and gravimetric analysis. The relationships between porosity, porous layer thickness, and silicon etching rate as functions of process duration, conductivity type and wafer resistivity were established. High porosity-to-thickness ratio has been found to be a characteristic of porous layers formed on arsenic-doped (0.001 Ω·cm) and boron-doped silicon wafers (0.01 Ω·cm), while a low ratio has been observed on phosphorus-doped silicon wafer (4.5 Ω·cm). This study results can contribute to porous silicon based technologies enhancement.

Key words: porous silicon, Pt particles, Pt-assisted chemical etching, resistivity
Published in: ELECTRONICS MATERIALS
Bibliography link: Volovlikova O. V. Silicon wafers conductivity type and resistivity effect on the morphology of the porous layer formed with Pt-assisted chemical etching. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(4):387–399. (In Russ.). DOI: 10.24151/1561-5405-2026-31-4-387-399.BSQMFK
Financial source: the work has been supported by the Ministry of Education and Science of the Russian Federation within the framework of the state task (Agreement FSMR-2023-0003). Acknowledgments: the author expresses gratitude to E. N. Lazorkina, a postgraduate student at the Institute of Advanced Materials and Technologies of MIET, for assistance in preparing the samples, and to L. S. Volkova, a junior researcher at INME RAS, for assistance in studying the samples with SEM method.

Olga V. Volovlikova
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: 621.793.3+544.653.22
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2026-31-4-387-399
RISC id: BSQMFK

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