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High-efficiency transceiver modules for the X-band have been used in active phased array antennas, satellite communication systems, and radar applications. The attenuator functional units within transceiver modules should ensure precise control of the received and transmitted signal levels, overload protection, and provide radiation pattern formation. However, the parasitic phase shift, occuring when adjusting the signal loss level, can disrupt the coherency of the phased array signals. The design procedure and fabrication process of an MMIC for an X-band stepped attenuator based on switched elements with a minimum attenuation step of 0.5 dB were presented in this work. The integrated circuit design was implemented using the GA05-D-L-01 standard process design kit, which is based on 0.5-um GaAs pHEMT technology. The root-mean-square amplitude error has been 0.16–0.27 dB and the parasitic phase shift has been 1.7°–3.4° across the operating frequency range by the simulation results.

Key words: GaAs, pHEMT, stepped attenuator, Microwave Monolithic Integrated Circuit, MMIC, Single Pole Double Throw switch, AESA
Published in: CIRCUIT ENGINEERING AND DESIGN
Bibliography link: Kulish А. M., Losev V. V. GaAs-pHEMT design technique for the X-band stepped 6-bit attenuator with a low parasitic phase shift. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(4):427–437. (In Russ.). DOI: 10.24151/1561-5405-2026-31-4-427-437.TXHYGT
Financial source: the work has been supported by the Russian Science Foundation (project no. 23-19-00771) and Ministry of Education and Science of the Russian Federation within the framework of the federal project “Personnel training and scientific foundation for the electronic industry” according to the state assignment for the research work “Development of a methodology for prototyping an electronic component base in domestic microelectronic industries based on the MPW service”.

Artem M. Kulish
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; JSC Microwave systems, Moscow, Russia, 105122, Moscow, Shchelkovskoe hwy., 5, bld. 1

Vladimir V. Losev
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: 621.382.2/.3
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2026-31-4-427-437
RISC id: TXHYGT

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