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Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika

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In transceivers and measuring equipment, it is important to be able to discretely adjust signal gain level, output power and power consumption. It can be realized when using bypassed amplifiers, which makes it possible to have a predetermined microwave signal transmission coefficient at the output of the functional node. In this work, the design process of a X-band microwave monolithic integrated circuit of a low-noise amplifier with an integrated bypass channel using a process design kit of GA05-D-L-01 technological process, which is based on GaAs pHEMT with a gate length of 0.5 μm is presented. The operating features of a monolithic integrated circuit are described. As a result of electromagnetic modeling of the microwave monolithic integrated circuit layout the following characteristics have been obtained: in the “Gain” mode signal gain is more than 20.0 dB, minimum value of noise figure is 3.0 dB, power consumption is 300 mW, and input/output return losses are not more than 10 dB. In the “Bypass” mode signal losses are no more than 1.5 dB, noise figure is no more than 1.5 dB, and input/output return losses are not more than 15 dB.
  • Key words: GaAs-pHEMT, low-noise amplifier, LNA, microwave monolithic integrated circuit, MMIC, single pole double throw switch
  • Published in: CIRCUIT ENGINEERING AND DESIGN
  • Bibliography link: Losev V. V., Kulish A. M. The design of the X-band low-noise amplifier with bypass option using 0.5 m GaAs pHEMT process design kit. Proc. Univ. Electronics, 2025, vol. 30, no. 1, pp. 64–75. https://doi.org/10.24151/1561-5405-2025-30-1-64-75
  • Financial source: The work has been supported by the Russian Science Foundation (project no. 23-19-00771) and the Ministry of Education and Science of the Russian Federation within the framework of the federal project “Personnel training and scientific foundation for the electronic industry” according to the state assignment for the research work “Development of a methodology for prototyping an electronic component base in domestic microelectronic industries based on the MPW service”.
Artem M. Kulish
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); JSC “Microwave systems” (Russia, 105122, Moscow, Shchelkovskoe Hwy, 5, bld. 1)
Vladimir V. Losev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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