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During operation of power module based on IGBT transistors at any arbitrary time only a part of transistors is open. This causes the disbalance of separate crystals’ temperature and the appearance of lateral heat flow between them. For exact estimate of overheat temperature of all module crystals it is necessary to consider their mutual thermal couplings. Measurement of cross-thermal resistances between transistors (non-diagonal elements of the matrix) is problematic because enthalpy flux from heated crystal is considerably distorted when it comes to nearby module crystals, which hampers the measurement of their temperature response. In this work, the developed modulation method based on transistor heating with power modulated according to the harmonic law is considered. Using the hardware and software complex in which the modulation method was implemented, the measurements of diagonal and non-diagonal elements of thermal resistance matrix of power module GD35PIT1205SN were carried out. Two components of thermal cross-resistance have been identified. One of them is associated with the heat flow along the upper copper layer of the DBC board, and the other, with the heat flow along the base board that is the package of module. This method allows the measurement of all thermal resistance components between the diode of transistor and the module package and also of cross-thermal resistances between arbitrarily selected pairs of transistors.

Key words: power IGBT module, thermal resistance matrix, cross-thermal resistance, modulation method
Published in: CIRCUIT ENGINEERING AND DESIGN
Bibliography link: Smirnov V. I., Gavrikov A. A., Neichev V. F. Modulation method for measuring thermal resistances in power IGBT modules. Proc. Univ. Electronics, 2025, vol. 30, no. 1, pp. 40–50. https://doi.org/10.24151/1561-5405-2025-30-1-40-50
Financial source: The work has been supported by the Russian Science Foundation (project no. 23-29-00026).

Vitaly I. Smirnov
Ulyanovsk State Technical University (Russia, 432027, Ulyanovsk, Severny Venets st., 32); Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (Russia, 432011, Ulyanovsk, Goncharov st., 48/2)

Andrey A. Gavrikov
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (Russia, 432011, Ulyanovsk, Goncharov st., 48/2)

Vladimir F. Neychev
Ulyanovsk State Technical University (Russia, 432027, Ulyanovsk, Severny Venets st., 32)

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Information about the publication

UDK: 681.518.3
Publication type: Scientific article
DOI: 10.24151/1561-5405-2025-30-1-40-50
RISC id: GICCZD

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