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Focused ion beam systems, typically those employing gallium ions, have become widely used for the study and fabrication of micro- and nanostructures. The FIB method used for prototyping optical devices provides the ability to produce low-roughness surface patterns. However, implanting gallium ions into the sample material causes a significant deterioration in the optical characteristics of such devices. In this work, it was demonstrated that using a line-by-line FIB scanning strategy enables the formation of axisymmetric structures in silicon dioxide substrates, shaped like Fresnel phase plates, with a low content of implanted gallium. The templates for fabricating the structures consisted of two concentric rings with inner radii of 3.13 and 5.42 μm and widths of 1.30 and 0.84 μm, respectively. The resulting features and similar structures fabricated using standard multi-pass scanning were compared by optical microscopy and energy-dispersive X-ray microanalysis in transmission electron microscope. It was shown that with line-by-line scanning of the ion beam, the peak concentration of gallium atoms in the near-surface region of the sample is less than 5 at. %, compared to approximately 33 at. % for multi-pass scanning, and the thickness of the gallium-enriched layer is reduced by approximately half, reaching roughly 20 nm. It has been established that due to the reduced concentration of gallium atoms, the transparency of the fused silica in the ion-beam-treated substrate regions is increased for structures fabricated using the line-by-line scanning strategy.

Key words: focused ion beam, sputtering, silicon dioxide
Published in: TECHNOLOGICAL PROCESSES
Bibliography link: Rumyantsev A. V., Borgardt N. I., Volkov R. L. Focused ion beam fabrication of axisymmetric structures in silicon dioxide using the edge milling process of the line-by-line scanning strategy. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(2):158–167. (In Russ.). https://doi.org/10.24151/1561-5405-2026-31-2-158-167.
Financial source: the work has been supported by the Russian Science Foundation (Agreement no. 23-19-00649) using the equipment of the Center for Diagnostics and Modification of Microstructures and Nanobodies.

Alexander V. Rumyantsev
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Nikolay I. Borgardt
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Roman L. Volkov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: 537.534.35
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2026-31-2-158-167
RISC id: UIRDLK

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