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With the continuous scaling of photolithography technologies and the transition to resolutions below 180 nm, it becomes necessary to overcome diffraction limitations related to deep ultraviolet (DUV) radiation usage. One of the most effective solutions to this problem is the ap-plication of phase-shifting photomasks, which allow increasing resolution by controlling the phase of transmitted light. A key component of such photomasks is the phase-shifting layer, the optical characteristics and resistance to DUV radiation of which critically affect the quality of the features formed in the resist. In this work, the analysis of selected composition of phase-shifting layers based on Mo-Si and Ta-Si deposited by magnetron sputtering in a nitrogen-containing atmosphere is performed. The optical characteristics of these materials, their stability under DUV exposure, and suitability for photolithography applications were determined. The ef-fect of nitrogen concentration in the process gas mixture on the composition and properties of the resulting films was investigated. The refractive index, extinction coefficient, transmittance, and phase shift of the formed layers were measured. These layers’ radiation stability under KrF laser radiation (248 nm) exposure was analyzed. It was demonstrated that layers based on Mo-Si and Ta-Si exhibit minimal changes in their optical properties at irradiation doses from 0 to 2.5 kJ/cm2. This makes them suitable for use in photomask fabrication. It was found out that at higher irradiation doses, degradation of optical properties starts, which is attributed to partial oxidation of the layers. The diffraction pattern simulation was performed and the optical contrast achievable when using the proposed materials in a photomask structure was evaluated. The simulation has demonstrated that the use of the proposed phase-shifting materials based on Mo-Si and Ta-Si makes it possible to get high optical contrast (close to 1) for 120 nm line and space patterns.

Key words: phase-shifting photomask, magnetron sputtering, deep ultraviolet exposure, photolithography
Published in: ELECTRONICS MATERIALS
Bibliography link: Anikin A. V., Gromov D. G., Lebedev E. A., Borgardt N. I., Volkov R. L., Lavrov I. V. et al. Investigation of the formation process and stability of Mo-Si and Ta-Si based phase-shifting layers for photomasks under DUV with 248 nm wavelength exposure. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(5):552–565. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-5-552-565.
Financial source: the work has been supported by the Ministry of Science and Higher Education of the Russian Federation under the state assignment (Agreement FSMR-2025-0006)

Andrey V. Anikin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Dmitry G. Gromov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); I. M. Sechenov First Moscow State Medical University (Russia, 119435, Moscow, Bolshaya Pirogovskaya st., 2, bld. 4)

Egor A. Lebedev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Nikolay I. Borgardt
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Roman L. Volkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Igor V. Lavrov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Sergey V. Dubkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Evgeny N. Vigdorovich
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Aleksandr V. Pavlikov
Lomonosov Moscow State University (Russia, 119991, GSP-1, Moscow, Leninskie gory, 1, bld. 2)

Maksim S. Komlenok
Prokhorov General Physics Institute of the Russian Academy of Sciences (Russia, 119991, Moscow, Vavilova st., 38)

Nikolay D. Kurochitsky
Prokhorov General Physics Institute of the Russian Academy of Sciences (Russia, 119991, Moscow, Vavilova st., 38)

Vladislav D. Gromov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Roman M. Ryazanov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)

Nikita V. Krokhan
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Rustem A. Sharipov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Oksana V. Novikova
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Oleg V. Podorozhniy
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Sergey A. Gavrilov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

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Information about the publication

UDK: 539.231
Publication type: Scientific article
DOI: 10.24151/1561-5405-2025-30-5-552-565
RISC id: XWQFVN

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